EPC Space, a specialist in rad-hard GaN-on-silicon transistors and ICs, has announced that both its Andover, Massachusetts ...

The Biden-Harris Administration has announced that it is taking action to protect American workers and businesses from what ...

Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

$406 million funding award will support silicon, silicon-on-insulator, and SIC wafer fabrication The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to ...

GaN power devices have many attributes. They are renowned for their exceptional switching efficiency and high power density, strengths that are driving the development of miniaturised, energy-saving ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often irreversible effects, and the future of these devices has reached a point ...

The number of power-hungry applications involving massive computation is on the rise, due to growth in datacenters, AI, wafer-scale compute, supercomputers and 5G/6G networks. Due to this, there is a ...